As the name stands PN junction Diode is made up of P type and N Type semiconductor material. o Potential thus produced are called ..potential barrier Ge..O.3V Si ..o.7V. A PN junction is the simplest form of the semiconductor diode. The Light emitting diode is a two-lead semiconductor light source. If a P-type and an N-type material are brought close to each other, both of them join to form a junction, as shown in the figure below. 4 Basic Semiconductor. Understanding about the P-N Junction Diode Theory and Working A P-N Junction Diode is formed by doping one side of a piece of silicon with a P-type dopant (Boran) and the other side with a N-type dopant (phosphorus).Ge can be used instead of Silicon. This may be achieved by diffusing acceptor impurities in to an n type silicon crystal or by the opposite sequence. The terminal connected to P-type material is called Anode and … In LED, the p and n regions are forward biased. Looks like you’ve clipped this slide to already. Hence the LED allows the flow of current in the forward direction and blocks the current in the reverse direction. If one side of a single crystal of pure semiconductor (Ge or Si) is doped with acceptor impurity atoms and the other side is doped with donor impurity atoms, a PN junction is formed as shown in Fig P region has a high concentration of holes and N region contains a large number of electrons. P-n junctions consist of two semiconductor regions of opposite type. See our Privacy Policy and User Agreement for details. Forward biased diode: In a very PN junction diode once the forward voltage is applied that is, a positive terminal of a source is connected to the p aspect, and conjointly the negative terminal of the availability is connected to the n-type aspect, the diode is speculated to be in forward biased condition. They become minority carriers of the other side. P-N JUNCTION  Also known as a diode  One of the basics of semiconductor technology -  Created by placing n-type and p-type material in close contact  Diffusion - mobile charges (holes) in p- type combine with mobile charges (electrons) in n-type 14. A p-n junction diode is formed by placing and n type semiconductor materials in intimate p contact on an atomic scale. Questions you should be able to answer by the end of today’s lecture: Doping with acceptor creates p type semiconductor while doping with donors produces n type. Light Emitting Diode (LED) works only in forward bias condition. An attractive animation is presented in this video with complete voice description. Similarly, o An additional holes from the P region are repelled by the net positive charge of the n region. Let us consider few notations. A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor creating a potential barrier voltage across the diode junction The effect described in the previous tutorial is achieved without any external voltage being applied to the actual PN junction resulting in the junction being in a state of equilibrium. Forward biased PN junction o. Working of PN Junction Diode If an external potential is applied to the terminals of PN junction, it will alter the potential between the P and N-regions. V Principle of Solar Cell V Current generation V I-V characteristic of an illuminated p-n junction V Physical process of Solar cell V I-V characteristic of solar cell V Solar cell parameter V Applications V reference V Device that converts optical energy into electrical energy. Please enter the OTP sent to your mobile number: Post an enquiry and get instant responses from qualified and experienced tutors. It is used majorly in rectifier and voltage regulator circuits. Current-voltage characteristics of the p-n junction. In ideal conditions, this PN junction behaves as a short circuit when it is forward biased, and as an open circuit when it is in the reverse biased. Thus a reverse biased pn junction does not conduct current. Minority charge carrier concentration reduces exponentially as seen away from the junction. o For each hole in the P section that combines with an electron from the N section, a covalent bond breaks and an electron is liberatyed which enters the positive terminal Thus creating an electron hole pair. You can change your ad preferences anytime. RESISTORS 1. Volt-ampere (V-I) characteristics of a pn junction or semiconductor diode is the curve between voltage across the junction and the current through the circuit. o Thus the P N junction diode allows the electrons flow only when P is positive , o This property is used for the conversion of AC into DC , Which is called rectification. The name diode is derived from “di–ode” which means a device that has two electrodes. Current in the N region is carried by ....electrons Current in the P region is carried by . If you have your own PowerPoint Presentations which you think can benefit others, please upload on LearnPick. The m… V-I characteristics of p-n junction diode. V Definition. 1. Clipping is a handy way to collect important slides you want to go back to later. It is created by doping. The V-I characteristics or voltage-current characteristics of the p-n junction diode is shown in the below figure. When free electrons reach the junction or depletion region, some of the free electrons recombine with the holes in the positive ions. Working of Light Emitting Diode. Similarly for holes from P region. The overall unit is of very small dimension nearly about 2.5 mm. This concentration will be more at the junction. See our User Agreement and Privacy Policy. The PN junction of the device placed inside a glass material. 40 30 20 10 40 Forward Bias Region 140 V (volts) 120 80 0.4 2 6 0.8 12 V (volts) Reverse Bias Region Figure 5.1: Diode Characteristics. PN junction diodes can be obtained in a number of semiconductor materials - the earliest diodes tended to be made from germanium, but most of them today are silicon diodes. o The depletion layer contains no free and mobile charge carriers but only fixed and immobile ions. The p-n junction is a versatile element, which can be used as a For All Subject Study Materials – Click Here. Formation of depletion layer the excess electrons in the N region cross the junction and combine with the excess holes in the P region. It forces the majority charge carriers to move across the junction ... .decreasing the width of the depletion layer. ... PIN Diode Working Characteristics and Its Applications.pdf. This is known as DEPLETION LAYER ..Thickness is of the order of 10-6meter. PN junction can basically work in two modes, (Abattery is connected to the diode) forward bias mode (positive terminal connected to p-region and negative terminal connected to n region) reverse bias mode (negative terminal connected to p-region and positive terminal connected to n region) … Clear your doubts from our Qualified and Experienced Tutors and Trainers, Download Free and Get a Copy in your Email. The P … pn-junction-fabrication In practice, the P-N junction is formed from a single mono crystalline structure by adding carefully controlled amounts of donor and acceptor impurities. ADVANTAGES: o No filament is necessary Occupies lesser space o Long life. A P-type material has holes as the majority carriers and an N-type material has electrons as the majority carriers. Pn junction diode characteristics Lab expriment, Presentation on half and full wave ractifier.ppt, No public clipboards found for this slide. This is done to order to allow the light energy to pass through it. However, unlike a resistor, a diode does not behave linearly with respect to the applied voltage as the diode has an exponential current-voltage ( I-V ) relationship. PN junction can basically work in two modes, (A battery is connected to the diode) Oforward bias mode (positive terminal connected to p-region and negative terminal connected to n region) areverse bias mode (negative terminal connected to p-region and positive terminal connected to n … We use your LinkedIn profile and activity data to personalize ads and to show you more relevant ads. But the material from which it is composed differentiates it from the ordinary one. Slideshare uses cookies to improve functionality and performance, and to provide you with relevant advertising. When the voltage is applied, due to the forward biased condition, the majority carriers of one side move towards the other. A p-n junction is the metallurgical boundary between the n and p-regions of a semiconductor crystal. It supplies a voltage and a current to a resistive load (light, battery, motor). Lecture 18 The P-N Junction (The Diode). When the length of the nregion is longer than the di usion length, the hole concentration at a distance xfrom the depletion region, marked in gure 3, is given by p n(x) = p n(0) exp(x L h) excess holes ) p … APPLICATIONS- as rectifiers to convert AC into DC. PN junction diode – Study Material. PN Junction Diode ENGI 242 ELEC 222 PN Junction Diode Diode Model Analysis Ideal Approximation Exact Diode Specification Sheets Diode Resistance Static Resistance RD ... – A free PowerPoint PPT presentation (displayed as a Flash slide show) on PowerShow.com - id: 6e985b-NzNlY These materials are N-type, having electrons are majority carrier and P-type material, having holes are majority carrier. When Light Emitting Diode (LED) is forward biased, the free electrons from n-side and the holes from p-side are pushed towards the junction. Joining p-and n-doped semiconductors. The horizontal line in the below figure represents the amount of voltage applied across the p-n junction diode whereas the vertical line represents the amount of current flows in the p-n junction diode. Such junctions show a pronounced rectifying behavior. For example, if N-type is considered, the excess of holes that enter into N-type after applying forward bias, adds to the already present minority carriers of N-type material. You just need to take a battery whose values can be varied from (o to V volts), connect its positive terminal to the p-side of pn junction diode and then connect the negative terminal of battery to the n-side of the pn junction diode. Normally the voltage is taken along the x-axis and current along y-axis. The LED occupies the s… This potential difference can alter the flow of majority carriers, so that the PN junction can be used as an opportunity for the diffusion of electrons and holes. interface or a boundary between two semiconductor material types PN.ppt - Free download as Powerpoint Presentation (.ppt), PDF File (.pdf), Text File (.txt) or view presentation slides online. 2. As both of them travel towards the junction, holes and electrons recombine with each other to neutralize and forms ions. In 1962, Nick Holonyak has come up with an idea of light emitting diode, and he was working for the general electric company. 3. o As detectors in radios to detect audio signals o As LED to emit different colours. Slideshare uses cookies to improve functionality and performance, and to provide you with relevant advertising. Holes. As opposite charges attract, few holes in P-type tend to go to n-side, whereas few electrons in N-type tend to go to P-side. P type and N type semiconductors, takenseparately are of very limited use.If we join a piece of P type material to a pieceof N type material such that the crystalstructure remains continuous at the boundary,,….. A PN JUNCTION is formed. If you continue browsing the site, you agree to the use of cookies on this website. o As an switch in computer circuits. Here discussion is limited only to acquaintation with the basic techniques and terminology (not expertise in fabrication). The LED is a special type of diode and they have similar electrical characteristics of a PN junction diode. An additional electrons from the N region are repelled by the net negative charge of the p region. They are also called p-n diodes in analogy with vacuum diodes. P-N Junction Diode: A P-N Junction Diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. Now customize the name of a clipboard to store your clips. how the electrons and holes are released while applying FB and RB in PN-junctions. As the newly formed component can have two terminals or electrodes (one connected to P-type and the other to the N-type) it is called as diode or P-N junction diode or semi-conductor diode. o Electronic Symbol .....the triangle shows indicated the direction of current P type N type Depletion layer forms an insulator between the 2 sides. As only the junction is exposed to radiation, thus, the other portion of the glass material is painted black or is metallised. Today: 1. For each approved PPT you will get 25 Credit Points and 25 Activity Score which will increase your profile visibility. Consider the nside of the junction, where the excess minority carriers are holes. When a forward voltage is applied to the PN junction diode. P-NJUNCTION p-njunction is a boundary or interface between two types of semiconductor material/ p- type and n-type, inside a single crystal of semiconductor. It operates like any other forward biased junction diode. Depletion and built-in voltage. If you continue browsing the site, you agree to the use of cookies on this website. PN Junction diode is a device made of two semiconductor material joined together with the required amount of impurity. ... PN JUNCTION DIODES AND. With proper biasing, PN diode allows current to flow in SINGLE DIRECTION. Hence it is an unidirectional device. N region loses its electrons ......becomes + VIY charged P region accepts the electrons ......becomes -vly charged At one point , the migratory action is stopped. Movement of electrons and holes when forming the junction Depletion Region Approximation: Step Junction Solution Fig. Reverse biased junction If the + of the battery is connected to the n-type and the - terminal to the p-type, the free electrons and free holes are attracted back towards the battery, hence back from the depletion layer, hence the depletion layer grows. PN Junction Diode Characteristics[ V-I Forward and Reverse] PN Junction diode is a semiconductor devices which conducts from only one side. The circuit connection for determining the V-I characteristics of a pn junction is shown in the figure below. This video explains complete process of diode working i.e. . Thus a pn junction is formed in diode. A pn junction diode is a two terminal single crystal semiconductor device whose one side is doped with acceptors and other side by donors. Forward biasing a pn junction diode is very simple. e Its width depends upon the doping level.. thin depletion layer e Heavy doped o lightly doped thick depletion layer, POTENTIAL BARRIER The electrons in the N region have to climb the potential hill in order to reach the P region Electrons trying to cross from the N region to P region experience a retarding field of the battery and therefore repelled. PN junction can basically work in two modes, (A battery is connected to the diode ) Oforward bias mode ( positive terminal connected to p-region and negative terminal connected to n region) areverse bias mode ( negative terminal connected to p-region and positive terminal connected to n region) . Now, in this junction, there exist… PN Junction diode. Once the junction is crossed, a number of electrons and the holes will recombine . 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